Part Number | BUZ30A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Siemens |
Description | MOSFET N-CH 200V 21A TO220-3 |
Series | SIPMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
BUZ30A H3045A
SIEM
146
1.89
Yingxinyuan INT'L (Group) Limited
BUZ30A H
SIENEMS
845
2.5775
Yingxinyuan INT'L (Group) Limited
BUZ30A
SIEME
800
3.265
Yingxinyuan INT'L (Group) Limited
BUZ30A
SIENENS
133895
3.9525
Kunlida Electronics (HK) Limited
BUZ30A H3045A
SIEMEIS
35026
4.64
N&S Electronic Co., Limited